BRC Solar GmbH has included Efficient Power Conversion’s EPC2218 100 V FETs into BRC’s next-generation M500/14 power optimizer, enabling it to have the next present density as a result of low power dissipation and the small dimension of the GaN FET, making the important load circuit extra compact.
The small parasitic capacitance and inductance of the GaN FETs create a clear switching efficiency that enables good EMI habits within the area, the corporate says. Another good thing about the GaN FETs is the zero reverse restoration losses.
The EPC2218 is a 100 V GaN FET, 3.2 mΩ, 231 Apulsed, with a small footprint of simply 3.5 mm x 1.95 mm, providing decrease losses and smaller dimension than comparable silicon MOSFETs for elevated power density.
BRC’s earlier vary, the M400/12, dealt with currents as much as 12 amps and a most power operation at 400 W. By altering from Si FETs to GaN FETs, the corporate achieved a rise of output present to 14 amps with a power ranking of 500 W, whereas conserving the identical board dimension. Also, the switching frequency within the M500/14 is twice as excessive than the earlier era, permitting for passive parts, similar to capacitors and inductors, to be decreased in worth and even fully eliminated.
The firm’s optimizer is barely energetic when shading on the photovoltaic module seems. The predominant case is a totally irradiated module, the place the circuit goes into an inactive state. The switching FET is repeatedly closed on this state of affairs. It is necessary that the power losses on the board be stored as little as potential. Because of that, the EPC2218 is the optimum resolution for BRC’s software due to its low RDS(on). The static losses are additionally extraordinarily small due to the conductivity of the GaN FET.
During the energetic mode, the switching habits of the module optimizer results in a small and acceptable power loss. The low parasitic parts of the EPC2218 allow quick and clear switching within the software.
In each modes, the temperature rise of the FET is small and permits good thermal switch to the board by way of the LGA pads of the EPC2218 even at greater ambient temperatures. Therefore, an extra heatsink will not be required additional saving house and weight.
“EPC’s eGaN FETs open a new horizon in the development of high-density power electronics,” says Winona Kremb from BRC Solar Gmbh. “We will watch the further applications and products from EPC and are excited to be part of the journey.”
“Working with BRC has been an exciting design-in opportunity and, together with our distribution partner Finepower, we have been able to achieve great results moving the company from silicon to GaN. Designers using GaN can now take advantage of devices that are higher performance, smaller, more thermally efficient, and at a comparable cost,” provides Stefan Werkstetter, VP of gross sales for EMEA.