Magnachip Semiconductor Corp. has launched a brand new 650V insulated-gate bipolar transistor (IGBT) for solar inverters. Magnachip developed the product with superior subject cease trench expertise for fast-switching pace and excessive breakdown voltages. The firm will start mass manufacturing of it this month.
The present density of this new 650V IGBT was improved by 30% in comparison with the prior technology by adopting the newest expertise. This IGBT can also be designed to supply a minimal short-circuit face up to time of 5µs. It is optimized for parallel switching due to its constructive temperature coefficient. The parallel switching of this IGBT will improve the load present and thus the utmost output power.
In addition, the 650V IGBT options anti-parallel diodes for fast-switching and low-switching loss, whereas guaranteeing a most working junction temperature of 175°C. Based on requirements issued by the Joint Electron Device Engineering Council (JEDEC), this new IGBT might be extensively used for functions requiring strict power stage and excessive effectivity, reminiscent of solar enhance inverters and converters, uninterruptible power provides, and common power inverters.
“Magnachip’s first IGBT was introduced in 2013, and since then, we have been committed to developing high-efficiency products for a variety of markets, while strengthening our presence around the world,” states YJ Kim, CEO of Magnachip. “With this new product, we are expanding our efforts to deliver high-performance products for the eco-friendly renewable energy market.”